JJAP Conference Proceedings
Online ISSN : 2758-2450
Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)
Session ID : 011402
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Nanostructures
Rod-like precipitates formed in vapor-deposited Fe-Si film
Shin-ichiro KondoTakao MorimuraHiromichi Nakashima
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CONFERENCE PROCEEDINGS OPEN ACCESS

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Abstract

Semiconducting β-FeSi2 is a potential candidate material for solar cells. Various fabrication methods have therefore been proposed for smart films of this material. However, the dynamics of β-FeSi2 formation are not fully understood and require investigation. Our experimental results based on TEM and SEM observations imply that the mechanism for forming iron silicide is very complex, and exhibits strong dependence on the fabrication method. Rod-like precipitates form in a sample fabricated with double iron deposition and no precipitates form in a sample fabricated with single iron deposition on a silicon substrate.

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