Temperature and deformation dependence of p-Al_xGa_1−xAs/GaAs_1−yP_y/n-Al_xGa_1−xAs laser diode wavelength and polarization

Abstract

Numerical calculations of the optical energy gap and the optical gains g_TE, g_TM of TE and TM polarization modes in p-Al_xGa_1−xAs/GaAs_0.84P_0.16/n-Al_xGa_1−xAs laser diode structure are carried out for uniaxial compression up to P = 10 kbar along in-plane and normal to a heterostructure directions at temperature interval 77–300 K. The optical energy gap shift under compression is substantially anisotropic and does not change significantly between 77 and 300 K. The g_TM/g_TE ratio is also almost insensitive to the temperature but demonstrates several times decrease under in-plane compression and no change under compression normal to a heterostructure.