Observation of Magnesium-Induced Crystallization (Mg-MIC) of a-Si Thin Film

Takashi Ikehata; Ryota Sasajima; Motomu Saijo; Naoyuki Sato; Haruhiko Udono

doi:10.56646/jjapcp.8.0_011002

5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019)

Session ID : 011002

DOI https://doi.org/10.56646/jjapcp.8.0_011002

Conference information

Host: The Japan Society of Applied Physics

Name : 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019)

Location : Miyazaki, Japan

Date : July 20, 2019 - July 23, 2019

Thermoelectric materials

Observation of Magnesium-Induced Crystallization (Mg-MIC) of a-Si Thin Film

Takashi Ikehata, Ryota Sasajima, Motomu Saijo, Naoyuki Sato, Haruhiko Udono

Author information

CONFERENCE PROCEEDINGS OPEN ACCESS

Details

Abstract

Magnesium induced crystallization (Mg-MIC), that is, the low temperature crystallization process of an amorphous silicon (a-Si) film activated by magnesium has first been investigated. The crystallization temperature is evaluated as low as 450 °C from Raman spectroscopy in contrast to 600–800 °C in the solid phase crystallization (SPC) process (only a-Si film is heated). The crystallization is found to occur via the formation of intermediate phase: the silicide (Mg₂Si) as reported in the Ni-MIC studies. A filamentary structure expected from the previous studies is not observed.

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