Photoreflectance Spectra of Highly-oriented Mg2Si(111)//Si(111) Films

Y. Terai; H. Hoshida; R. Kinoshita; A. Shevlyagin; I. Chernev; A. Gouralnik

doi:10.56646/jjapcp.8.0_011004

5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019)

Session ID : 011004

DOI https://doi.org/10.56646/jjapcp.8.0_011004

Conference information

Host: The Japan Society of Applied Physics

Name : 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019)

Location : Miyazaki, Japan

Date : July 20, 2019 - July 23, 2019

Thermoelectric materials

Photoreflectance Spectra of Highly-oriented Mg₂Si(111)//Si(111) Films

Y. Terai, H. Hoshida, R. Kinoshita, A. Shevlyagin, I. Chernev, A. Gouralnik

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CONFERENCE PROCEEDINGS OPEN ACCESS

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Abstract

Direct transition energies of Mg₂Si were obtained by photoreflectance (PR) spectra of a highly-oriented Mg₂Si(111)//Si(111) film. In the PR spectra at 9 K, direct transition energies of E₁ = 2.38 eV, E₂ = 2.58 eV, E₃ = 2.69 eV, and E₄ = 2.82 eV were observed. In the temperature dependence of PR spectra, E₁ and E₂ shifted to lower energy at high temperatures, but there was no temperature dependence of transition energies in E₃ and E₄. These results showed that the temperature dependences of band structure in Mg₂Si differ at direct transition points.

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