Abstract
Characteristics of a silicon semiconductor detector in high en e rgy electron fields were studied. The output of detector in dose rate shows linearity up to 400R/min. The decrease in relative sensitivity induced by radiation damage is about 5% with the irradiation of 200 Gy. The detector shows the maximum sensitivity at the direction of 60° and the minimum at 90°.
The depth dose curves from the semiconductor detector agree with those from a shallow ionization chamber except for the build-up regions. Several paramerters, which chracterize the quality of the electron beam showed good agereement between semiconductor detector and shallow ionization chamber.
