Abstract
Reduction of debris adhesion and increasing the process performance by SF6 assist laser processing of silicon wafer was investigated. It is observed that debris adhesion was drastically reduced when SF6 gas was used to compare the case of He gas. Shadow graphic imaging experiments were shown a density contrast region in expanded gases, which would indicate the evaporation of silicon particles by chemical reaction with SF6 and silicon particles at the plasma-heating region. We found that process performance of SF6 assist laser processing was higher than the He assist processing, and debris adhesion was suppressed effectively in case where the intense plasma was formed during processing.
