Journal of the Japan Society for Precision Engineering
Online ISSN : 1882-675X
Print ISSN : 0912-0289
ISSN-L : 0912-0289
Paper
The Development of AC Electric Field Assisted Polishing for Silicon Carbide Substrates with Control of Abrasive Behavior
—Clarification of Improvement Mechanism for Polishing Rate with Electric Field—
Takayuki KUSUMIYasuhiro SATOHiroshi IKEDAYoichi AKAGAMINoritsugu UMEHARA
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2013 Volume 79 Issue 1 Pages 87-92

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Abstract
Authors have been developed a novel polishing method for silicon carbide substrate using functional fluids which are dispersed abrasives with silicone fluid. Behavior of abrasive can be controlled with electric field. In this report, we have confirmed the improved polishing rate in proportion to electric field strength, and the change for slurry characteristics by the solvent viscosity. And, we considered the improvement mechanism factor for polishing rate using controlled slurry under AC electric field in viewpoints of the number of active abrasives in polishing and the electric attractive pressure between polishing pad and workpiece.
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© 2013 The Japan Society for Precision Engineering
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