Journal of the Japan Society for Precision Engineering
Online ISSN : 1882-675X
Print ISSN : 0912-0289
ISSN-L : 0912-0289
Lecture
Development of Large SiC Wafer Processing Technique in “Novel Semiconductor Power Electronics Project Realizing Low Carbon Emission Society” Supported by NEDO
Tomohisa KATO
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Keywords: silicon carbide, power electronics, semiconductor, wafer processing, NEDO
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2014 Volume 80 Issue 1 Pages 18-22

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