Study on Polishing of Semiconductor Crystals (2)

Polishing process and worked layers in polishing

Abstract

The worked layers produced on (111) surfaces of germanium and silicon by metallographic and optical polishing have been studied with the tracing of polishing processes by mens of micro-etching, interferometry and electron microscopy. The model of distribution of residual stresses is considered to explain the results obtained in te msof the depth and the nature of worked layers on both the surfaces for these two crystals.