Journal of the Japan Society of Precision Engineering
Print ISSN : 0374-3543
Study on Polishing of Semiconductor Crystals (4)
Worked Layers of Optically Polished Surfaces in view of the Ultra-micro Scratching Hardness (II)
Ichiro IDAYuzo ARAIMakoto SUZUKI
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1963 Volume 29 Issue 342 Pages 507-514

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Abstract
By the use of the trially made ultra-micro scratching hardness tester, the relation 'between the scratching loads and the deformations has been clarified on the optically polished silicon. Hardness numbers having been obtained, along the depths from the polished surfaces of germanium and silicon the worked layers are discussed in view of the hardness variations. The results obtained are as follows:
(1) The work softening exists in silicon to a depth of 700 Å, while the indication of softening is seen in germanium at a depth of less than 200 Å.
(2) The constant hardness numbers are shown at a depth of 10, 000-15, 000 A for both crystals, which is very close to that obtained from the etching rate curves.
(3) The softening phenomenon is caused by the temperature rises due to surface friction. According to the simplified model, the temperatures reach near the softening points for both crystals.
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