Journal of the Japan Society for Precision Engineering
Online ISSN : 1882-675X
Print ISSN : 0912-0289
ISSN-L : 0912-0289
Study on Straightness of Ground Surface of Silicon Wafer
Studies on Wafer Rotation Grinding Method (2nd Report)
Satoshi MATSUITakeshi HORIUCHI
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1987 Volume 53 Issue 8 Pages 1265-1270

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Abstract
In this paper, the straightness of silicon wafer ground by wafer rotation grinding method is discussed, which is caused by the parallel error between grinding wheel axis and rotary table axis. The parallel error is defined by two angles, that is inclination angle θ and direction angle α. And the effect of the parallel error on the straightness is examined theoretically and experimentally. The main results obtained are as follows: (1) The profile and the straightness of the ground surface are largely effected by the direction angle α. (2) The direction angle al exists which makes the straightness minimum. (3) Practically, the straightness is maintained in the lowest level when the direction in which the thermal deformation of surface grinder is maximum is coincide with the direction angle α=0° or α=180°. (4) The straightness is proportional to the inclination angle θ. (5) In this experiment, the variation of the straightness was maintained less than ±1 μm at α_??_180° when the grinding operation was continued in several days using an ordinary surface grinder.
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