Abstract
CO2 laser was used to induce localized thermo-chemical etching of ZrO2, Al2O3 and Si3N4 in CF4gas, and the etching characteristics were investigated. The etching rate obtained in CF4 gas was several times greater than the one obtained in air. The etched hole was not accompained by surface cracks and melted materials, and the crystal grain was observed on the etched surface.