An Analysis of Anisotropic Etching Process

ffect of Side Etching Process on the Accuracy of Finished Profiles

Abstract

It is known that a groove can be shaped toward a wafer orientation (depth direction) by anisotropic etching with a mask arranged to a certain crystal direction and the accuracy of finished profiles is damaged because of an effect of side etching (unexpected etching toward side direction). The present paper has analyzed this side etching process by the help of reaction cage effect theory in the previous paper and can quantitatively estimate both the rate of side etching and the accuracy of finished profiles.