Abstract
Increasing integrated circuit packaging density calls for silicon wafers with smaller surface micro-roughness. In advanced device fabrication processes, rinse or ion implantation steps can create unacceptable roughness in oxide films or silicon base materials. Since the device element is of micron size, there is no method to confine processing to such a small area. In this study, a new method to perform processing within a micron sized area has been achieved using an atomic force microscope. Thus, the atomic force microscope is not only used as measuring equipment, but also as processing equipment. When processed using the atomic force microscope, surface roughness is smoothed to the atomic scale. This can not be achieved using any conventional methods. The new smoothing process discussed in this paper, is done in an alkaline water solution. The actual materials are charged to improve the good removing ratio.
