Abstract
Crystalline Pb(Zr0.3Ti0.7)O3 films with (001), (101) and (111) orientations were successfully fabricated on PbTiO3(PT)/Pt(111)/SiO2/Si(100) substrates, crystallized from an amorphous state by hot isostatic pressing (HIP). The crystallized PZT films had a preferential (001) orientation, with the degree of c-axis orientation α in the range of 0.49 to 0.61. From measurements of fatigue and imprint characteristics, PZT films HIP-treated at 1.5 MPa using a three-step (500-600-700°C) annealing program were shown to have the ability to be used as high-endurance and high-density element materials for ferroelectric random access memory (FeRAM) applications.
