Abstract
Using a Zn3In2O6 target, zinc-indium oxide thin films were prepared by rf magnetron sputtering at different substrate temperatures. The influence of the substrate temperature on the structure, Zn: In ratio, and optical, electrical and thermoelectric properties were studied. C-axis oriented thin films were deposited. The ratio of zinc to indium decreased with increasing the substrate temperature. An average transmittance of about 80% in the visible range was obtained. Conductivity of the films increased with increasing the temperature. The Seebeck coefficient was largest for the films deposited at room temperature. The films deposited at 500°C showed the highest power factor of PF=8.21×10−5 (W/mK2).
