Abstract
Mechanical and electrical properties of Si3N4/SiC composites, which dispersed SiC particles from micrometer size to nanometer size, were investigated. Furthermore, the analysis of the dispersion morphology of SiC particles was statistically carried out, and then the average gap width between SiC particles in networks Si3N4/SiC composites was calculated. Both bending strength and elastic modulus of the Si3N4/SiC composites could be improved by forming the network structure with the segregated SiC particles of nanometer size. The electric conductivity of Si3N4/SiC composites was improved by forming the network morphology with semiconductive SiC particles of 0.03 μm diameter, which set the gap width in the range of 20 to 90 nm interval.
