2024 Volume 71 Issue 9 Pages 355-360
A nanosecond pulse electric field is defined as the application of an electric field with a width of approximately 10 nanoseconds to 1 microsecond. Recent developments in power semiconductors such as SiC and GaN have made it possible to design power supplies with higher voltage and single pulse width. In such nanosecond pulsed electric fields, there are four major characteristics. The most important of these features is that dielectric breakdown does not occur even when an electric field higher than the breakdown voltage is applied because the pulse application time is shorter than the time during which breakdown occurs. In other words, the nanosecond pulsed electric field can be used to realize a material creation process with a higher electric field than before. In addition, when used in conjunction with optical switches, an electric field can be applied at a targeted timing. Short-time electrochemical reactions can be generated. Since the repetition frequency can be varied, the resonance phenomenon by frequency matching can be utilized as in the case of a high-frequency power supply. In this paper, we will explain the material process that makes use of these features.
