Abstract
The diamond deposition from (CH4+H2) mixed gas on WC-5%Co alloy substrate by means of hotfilament method was investigated. In this study, the distance(d) between filament and substrate, and the filament temperature (Tf) were tried to be shorter and higher, respectively, than the values (d=10 mm, Tf=2273 K) taken in the previous studies by the authors. It was found that the amount of deposited diamond and the upper value of CH4 concentration were increased with shorter d and higher Tf, when the substrate temperature was controlled. It was also found that the growth rate of diamond particles as high as about 3.5 μm/hr could be obtained under a specified condition.
