Abstract
The interface of the Zr/sapphire implanted with N+ ions were examined by RBS and cross-sectional TEM observations. The ion implantation induced the interdiffusion of atoms at the interface and the clear border-line between the Zr film and sapphire was found to disappear. The thickness of the diffusion layer was estimated to be about 10 nm at the interface of the Zr/sapphire implanted with N+ ions to the dose of 2×1017/cm2.
