Microstructure of the Interface Reaction Layer of a Thermally Joined BaPbO₃-TiO₂ Ceramic and Its Electrial Properties

Abstract

Joining of a metallic conducting BaPbO₃ ceramic with a semiconducting TiO₂ ceramic has been made at 1000°C in air, with the aim to form ferroelectric BaTiO₃ or PbTiO₃ layers at the interface between the two ceramics by solid state reaction.
The formation of BaTiO₃ and PbTiO₃ double layers at the reaction interface between the two ceramics joined was confirmed by XMA and X-ray diffractometry, but no ferroelectric behavior in the dielectric properties of the joined body of the two ceramics has been observed in the present experiment.