Abstract
The composition of Y-Ba-Cu-O thin films deposited by RF diode sputtering was examined by EPMA (Electron Probe Micro Analysis). The composition of Y-Ba-Cu-O thin films with a target made by the solid state reaction method changed with sputtering time even if the films were deposited under identical conditions. In contrast, the composition of films with a target made by the co-precipitation method were unaffected by sputtering time when they were deposited under identical conditions. Good control of the composition of Y-Ba-Cu-O thin films was achieved by optimizing both the RF input power density and the partial pressure of oxygen.
