Abstract
A study has been made of the dependency of electrical conductivity and structure of implanted carbon-films, on the target temperature during ion implantation. The c-film was produced by an ion-beam sputtering method on quartz substrates. Implantation of C+-ions was performed at 150 keV, held at the separate temperatures of -100 and 200°C, with doses of 2x1016 ions/cm2. The sheet resistivity was measured by a four point probe method at room temperature. Sheet resistivity was found to vary, depending on the target temperature during ion implantation, by approximately three orders of magnitude. Raman spectra were obtained and analyzed. The modified Raman spectra contained four broad peaks. The peak at 1150, 1360 and 1585 cm-1 is assigned to hydrogenous carbon, disordered graphite and graphite, respectively, and that detected at approximately 1500cm-1 is proposed owing to amorphous carbon. The peak at 1500cm-1 showed large differences in intensity at target temperatures between -100 and 200°C. These results are similar to those reported for ion implanted diamond.
