Effect of Ionization of Zn and Se Beams on the Crystal Structure of ZnSe Films Grown on Crystalline GaAs Substrates

Abstract

ZnSe films were grown on GaAs substrates using partially ionized Zn and Se beams, without heat treatment before growth. The ionization of Zn and Se beams was effective to remove the surface contamination. The quality of ZnSe films strongly depended on substrate bias. High-quality ZnSe films with smooth surfaces epitaxially grew on the substrate biased to -40V.