Preparation of Y-Ba-Cu-O Superconducting Films on Si Substrates by Chemical Vapor Deposition

Abstract

Y-Ba-Cu-O films were prepared at 700°C on Si(100) substrates and on (Y₂O₃)/(Y₂O₃ stabilized ZrO₂) buffer layers by chemical vapor deposition using p-diketone metal chelates as sources. The films were mainly composed of c-axis oriented YBa₂Cu₃O_x. Auger electron spectroscopy revealed interdiffusion of elements between the substrates and the films deposited directly on the Si substrates. The interdiffusion was prevented using the buffer layers. Epitaxial growth of YBa₂Cu₃O_x was confiremed by X-ray pole figure analysis for the films deposited on the Si substrates with the buffer layers. The films on the buffer layers showed zero resistivity at 87 K. Its critical current density was 10³A/cm² at 77 K and 0 T.