Abstract
Valence state of tin ions in the reactively deposited SnOx films were analyzed by Mössbauer spectroscopy. Both the amorphous and crystallized films were composed of Sn2+ and Sn4+. With increasing oxygen pressure, the oxidized degree of the amorphous films was increased to be saturated at the film composition of SnO1.5, while it was decreased at the higher substrate temperatures. The crystallized films was markedly oxidized at the higher substrate temperatures. The film composition was nearly SnO2 at 420°C. The values of the isomer shift and quadrupole splitting of Sn2+ and Sn4+ in the amorphous films suggested the oxygen coordinations for Sn2+ and Sn4 similar to those in Sn2O2 crystals, nearly independent of the film composition.