Abstract
The sintered PbTe compacts were prepared by HIP 2hour at 800°C under 22.5MPa in Ar atmosphere. The relative density of sample were 92-94%.
The grain sizes of HIPed specimen were a little smaller than those of normal sintered specimen. The Seebeck coefficient of HIPed specimen were a value of 440μV/K at 220°C. The specimens behave n-type semiconductor at more than 320°C, although this specimen is p-type semiconductor. This behavior seems to be due to the oxidation of dopant. The electrical resistivities of HIPed specimen were larger than those of normal sintered specimen. The thermal conductivity of HIPed specimen was a value of 2.657 W/mK at 70°C. Figure of merit for HIPed specimen was calculated smaller than that of normal sintered specimen. KEY WORDS
PbTe, sintering, HIP, microstructure.
