Abstract
Indium oxide films were reactively deposited on CeO2 films at substrate temperatures of 25-100°C. The influence of the CeO2 substrate on the film structure and their physical properties was studied. It was found that at 60°C, crystallized films were deposited on the CeO2 films 60Å thick and above, while films were quasi-amorphous on the thinner CeO2 films. At 100°C, films were a crystallized even on very thin CeO2 films of 25Å. The electrical resistivity of the films deposited at 60°C was drastically decreased with improvement in the crystallinity, while that of the films deposited at 100°C was slightly increased. The crystallized films showed much higher optical transmittance than the amorphous or quasi-amorphous films.
The films were also deposited on the CeO2 substrates by reactive DC sputtering and the structure was studied.
