Abstract
AlN ceramic is used as the package material instead of Al2O3 for microelectronics application fields because having high thermal conductivity, thermalstabi1ity, thermal expansion coefficient same as silicon high electrical resistance, low dielectric constant and so on. It is difficult to make a metallizing layer because of AlN is covalent bonded compound. We tried todeposit a copper film with RF sputtering method on to an oxidized top surface with ionic bonded Al2O3 ultra thin layer on AlN ceramic, and measured the adhesion.
The samples which were processed in the oxidation for 5 hour in air at 1173K gave a maximum value, 956 kg/CM2, in the adhesion. The decrease of the heat resistance by the oxidation process was not observed.
