Abstract
A thin-film thermistor using (Al, Cr, Fe)2O3 film with corundum structure was prepared, and characteristics of resistance-temperature and responsiveness were investigated. The corundum-type (Al, Cr, Fe)2O3 film was obtained by plasma enhanced metal organic chemical vapor deposition (MOCVD)and heat treatment in air. In this process, the deposition rate of the film was as high as 40 nm/min and the crystallization temperature for corundum structure was as low as 1200°C. The characteristics of resistance-temperature and responsiveness indicated that the thin-film thermistor allows temperature detection over wide range from 200°C to 950°C and rapid responsiveness of 3 times as fast as that of a conventional bulk thermistor.
