Abstract
Functional gradient Ba(ZrxTi1-x)O3 ferroelectrics ceramics with flat temperature dependence of dielectric constant were fabricated by Hot Isostatic Pressing. Functional gradient Ba(ZrxTi1-x)O3 ceramics compacts were prepared by piling each green compact with different composition. The piling compact sintered under atmospheric pressure cracked at an interface of each component. On the other hand, the piling compacts hipped at 1200°C were densified without separating to each component. Dielectric constant of hipped sample has a flat temperature dependence in a particular temperature range. The piling compact hipped at 200 MPa and 1200°C after pressurized to 200 MPa at 900°C suppressed grain growth and provided flat temperature dependence of dielectric constant over wide temperature range. It was suggested that application of high hipping pressure at lower temperature remarkably suppressed diffusion in the interface of the components.
