Abstract
Zn2In2O5 films were reactively deposited with assistance of rf discharge in the oxygen pressures of 3×10-2 and 7×10-2Pa and at substrate temperatures between room temperature and 530°C. The influence of the substrate temperature and the oxygen pressure on the film structure and the physical properties was studied. Crystallized films could be deposited at 3×10-2 Pa and at below 450°C, while at the higher oxygen pressure of 7×10-2 Pa, partially crystallized or amorphous films were deposited depending on the substrate temperature. The crystallized films deposited at 320 and 420°C exhibited high electrical conductance with the resistivity of about 8×10-3 Qcm and the excellent light transmittance of averagely 85% in the visible light range. At the lower substrate temperature and/or at the higher oxygen pressure, the resistivity of the films was markedly increased without deteriorating the high optical transmission.
