Abstract
Ferroelectric properties and memory characteristics of Pt/0.24Pb(Zn1/3Nb2/3)O3⋅0.384PbZrO3⋅0.376PbTiO3 (PZNZT)/PbTiO3/Pt capacitors fabricated by crystallizing amorphous PZNZT films at 500°C for 1 h under high pressures of 1.0-176.5 MPa using hot isostatic pressing (HIP) are investigated. The relative permittivity decreased linearly with increasing HIP pressure. All the samples treated at pressures greater than 17.7 MPa completely showed fatigue-free characteristics even after up to 3×1010 cycles. From dielectric measurements and cross-sectional highresolution TEM images, these fatigue-free behaviors may be caused by that several elongated amorphous areas oriented parallel to the substrate formed near the interface between the crystallized PZNZT layer and the PbTiO3 (PT) seed layer, which would play an important role in restraining the diffusion of lead from the crystallized layer toward the PT seed layer.
