Abstract
Viscosity of molten InSb, GaSb and InxGa1-xSb (x = 0.2 and 0.4) were measured as a function of temperature using an oscillating viscometer for fundamental understanding of the physical property for growing high quality of InGaSb multi-component semiconductor crystal. The measured values showed good Arrhenius linearity for InSb, GaSb and InxGa1-xSb samples. The absolute values of viscosity for InSb and GaSb agreed with previous study of other group. Also, it is suggested that absolute value of viscosity among InSb, GaSb and InxGa1-xSb were quite similar, and the value of InxGa1-xSb was between InSb and GaSb. The results are applied to the parameter of numerical simulations on InGaSb crystal growth under microgravity condition on the International Space Station.
