Abstract
A new high-speed transistor swiching device is attained using a high temperature oxidesuper-conducting bulk core of YBa2Cu3O7−x or BiSrCaCuO at 77 K. The device is capable of switching with a turn-on time (τon) of 0.2μs and a turn-off time (τoff) of 0.2μs, when used a 1A power transistor. These values are about 1/10 to 1/100 times shorter than those of a transistor swiching device with an amorphous ferromagnetic core. This can be attributed to the Meissner effect of the superconducting bulk core employed.
