Abstract
We investigate multilayer resist processes using reactive ion etching (RIE) for the narrow-track resist frame of thin-film heads. In terms of the shape of the resist, the three-layer resist (photoresist/SiO2/photoresist) process is better than the two-layer resist (Si containing resist/photoresist) process. Reducing the pressure of O2 plasma during RIE causes the residue of the resist to vanish. A resist frame with a width of 1μm and a height of 6μm can be produced by using the three-layer resist process. Plating was performed within this frame.
