Journal of the Magnetics Society of Japan
Online ISSN : 1880-4004
Print ISSN : 0285-0192
ISSN-L : 0285-0192
Sensor
MI Magnetic Sensor Using a C-MOS IC and Amorphous Wire
T. KannoK. Mohri
Author information
JOURNAL OPEN ACCESS

1997 Volume 21 Issue 4_2 Pages 645-648

Details
Abstract
This paper presents new micromagnetic sensors with high sensitivity and stability and low power consumption using an amorphous wire MI head and a C-MOS inverter IC. The sensors employ the pulse response MI effect. The basic properties of the pulse response MI effect in amorphous wire ( (Fe0.06Co0.94)72.5Si12.5B15) and two kind of sensor circuits are reported. The impedance in the MI head is sensitively changed to more than 80%/Oe owing to a sharp current magnetization. The sensor circuits operate with a high stability because of a current-source-like operation in the C-MOS IC, and the independence of the field detection sensitivity with respect to the oscillation frequency of the multivibrator. The power consumption in the sensor circuit is less than 0.5 mW.
Content from these authors
© 1997 by The Magnetics Society of Japan
Previous article Next article
feedback
Top