Numerical analysis of a high-frequency carrier-type magnetic sensor

Abstract

Large-scale elements of high-frequency carrier-type magnetic sensors were fabricated by using the photolithographic technique, and the impedance variation rate of the elements was investigated experimentally and theoretically. It was found that the resistance component of the impedance varied drastically, and the impedance variation rate was measured at 87 %, using an Fe-Ta-N film. A high-frequency signal level of 5 mV_pp/μm and an impedance variation rate of 94 % for a 0.5 μm track width were calculated by using theoretical formula