Abstract
Ferromagnetic MnSb films were fabricated on Si(100) and (111) single crystal substrates by dc planar sputtering. The effects of the substrate temperature and bias on the epitaxial growth are discussed. The main findings are as follows: (a) MnSb grains grown at Tsub. < 170°C were (110) oriented irrespective of the crystal planes of the Si substrates; (b) MnSb grains with (101), (102), and (001) orientations existed in films prepared at Tsub. > 170°C on Si(100) substrate; (c) MnSb grains epitaxially grown on Si(111) substrate were (101)-oriented at Tsub. = 200°C and (001)-oriented at Tsub. = 250°C; (d) in the sputtering method used, the substrate voltage changed from 0 to - 200 V, corresponding to a change in the ion assist energy from 0 to 40 eV/atom; and (e) the use of an ion assist of 15 eV/atom to Si(111) substrate decreased the epitaxial growth temperature of MnSb(001)-oriented grains from 250°C to 200°C.
