Dielectric Permittivity Changes with Magnetic Field in Fe₂O₃-Bi₂O₃-PbTiO₃ System Oxide Films

Abstract

In Fe₂O₃-Bi₂O₃-PbTiO₃ system thin films prepared by rf-reactive sputtering, the real part, ε_r', of dielectric permittivity, was changed by applying a magnetic field H. The Δε_r' vs. H curves of the films subjected to annealing at various temperatures were strongly correlated with their magnetization properties. The maximum relative value of |Δε_r'(H)/ε_r'| reached as much as 1.0%. A Δε_r'(H) curve can be reconstructed by a simple model based on uniform magnetization rotation.