Abstract
We calculated the magneto-optical properties of semiconductor-based multilayer structures containing GaAs:MnAs nanoclusters sandwiched by GaAs/AlAs distributed Bragg reflectors (DBRs). Very large magneto-optical Kerr effects (Kerr rotation and ellipticity) are predicted in multilayers with suitable DBR numbers. On the basis of the calculation, we have grown multilayer structures by molecular beam epitaxy, and have demonstrated a large Kerr effect (more than 600 mdeg of Kerr ellipticity) at a designed wavelength of ∼980 nm under a relatively low magnetic field at room temperature. This large magneto-optical effect in III-V semiconductor-based multilayer structures could be used for thin-film-type magneto-optical devices monolithically integrated with semiconductor opto-electronic circuitry.
