Abstract
A novel sputtering method using an electron-cyclotron-resonance (ECR) microwave plasma was used to perform reactive sputter-deposition of Ni-Zn ferrite thin films. Ni-Zn spinel ferrite thin films with preferential orientation of (400) and relatively low coercivity of 15 Oe were obtained at a high deposition rate of 14 nm/min. and at temperatures lower than 200°C. To achieve this high deposition rate, the configuration of the ECR sputtering apparatus and processing parameters such as the microwave input power, target voltage, and oxygen partial pressure were carefully optimized. Reactive ECR sputtering is one of the most suitable methods for preparation of ferrite thin films applicable to magnetic devices such as MMICs isolators and circulators.
