Abstract
We investigate the magnetoresistance of a magnetoresistive element consisting of a nonmagnetic semiconductor, four electrodes, and a metallic shunt, with varying locations of the voltage electrodes. The optimum location of the voltage electrodes is estimated from MR ratios calculated by using the finite element method. The MR ratio of 6.9%, which was obtained at an applied magnetic field of 0.005 T for an MR element with asymmetrical voltage electrodes separated by a distance of 25 nm, is higher than that for the MR element with symmetrical electrodes. In order to improve the MR ratio at a low applied field, a flux-guide-type MR element is proposed in this study. An MR ratio of 124% at an applied field of 0.005 T was obtained for a flux-guide-type element with asymmetrical electrodes.
