Abstract
Fabrication process for bubble memory devices with submicron minimum features has been developed. Deep UV contact printing and dry etching technologies are used. A newly developed photoresist, MRS, is used as the deep UV photoresist. The resolution of MRS resist exposed with deep UV light is superior to that of AZ1350J resist with UV light. Permalloy chevron patterns with 0.75 μm gaps were ion-etched through the MRS resist mask. Contiguous disk patterns of 2 μm period with 0.5 μm minimum feature were achieved by plasma etching of Mo/Si film through the MRS resist patterns.
