An Analysis of Signal Pulse from Semiconductor Junction Detectors

Abstract

An elementary method of wave form analysis for semiconductor detectors under certain working conditions is derived from a simple model of pulse formation. Agreement of the calculation with the corresponding experimental results is satisfactory.
The experiments were carried out on an M-8311-A-50 detector (TOSHIBA, 2, 500Ωcm, p-type Si). The load resistance was in the range 100-50, 000Ω. The amplitude and the rise-time have been found to be in the ranges 1-6mV and 3-9ns, respectively. The energy spectrum of detector pulse for low load impedance extends up to ca. 50 Mc.