8p-H-6 フェムト秒非共鳴イオン化分光による化合物半導体表面からのレーザー誘起非金属放出原子の高感度検出

金崎 順一; 岩田 圭司; 谷村 克己

doi:10.11316/jpsgaiyo.52.2.2.0_386_1

Meeting Abstracts of the Physical Society of Japan

Online ISSN : 2189-0803
ISSN-L : 2189-0803

52.2.2

Session ID : 8p-H-6

DOI https://doi.org/10.11316/jpsgaiyo.52.2.2.0_386_1

Conference information

8p-H-6 High-Sensitivity Measurements of Laser-Induced Non-Metallic Particles Desorbed from Compound Semiconductor Surfaces by Means of Femtosecond-Laser

J. Kanasaki, K. Iwata, K. Tanimura

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