28p-S-5 ENERGY DISTRIBUTION OF INTERFACE STATES IN THE BAND GAP OF GaAs REFLECTING DIFFERENT OXIDATION STAGES ON THE GaAs SURFACE DEVELOPED THROUGH AN ULTRA-THIN SILICON OVERLAYER DEPOSITION

Hikaru Kobayashi; IVANCO Jan; Tomohiro Kubota

doi:10.11316/jpsgaiyo.54.1.2.0_305_4

Meeting Abstracts of the Physical Society of Japan

Online ISSN : 2189-0803
ISSN-L : 2189-0803

54.1.2

Session ID : 28p-S-5

DOI https://doi.org/10.11316/jpsgaiyo.54.1.2.0_305_4

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28p-S-5 ENERGY DISTRIBUTION OF INTERFACE STATES IN THE BAND GAP OF GaAs REFLECTING DIFFERENT OXIDATION STAGES ON THE GaAs SURFACE DEVELOPED THROUGH AN ULTRA-THIN SILICON OVERLAYER DEPOSITION

Hikaru Kobayashi, IVANCO Jan, Tomohiro Kubota

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