Meeting Abstracts of the Physical Society of Japan
Online ISSN : 2189-0803
ISSN-L : 2189-0803
60.2.4
Session ID : 21pXA-3
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21pXA-3 Fabrication and characterization of field-effect transistor devices with fullerene related materials by solution process
Y. Kubozono, H. Kusai, Y. Takaguchi, Y. Sakoh, K. Imai, T. Nagano, A. Fujiwara
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© 2005 The Physical Society of Japan
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Meeting Abstracts of the Physical Society of Japan

Meeting Abstracts of the Physical Society of Japan

Meeting Abstracts of the Physical Society of Japan

Meeting Abstracts of the Physical Society of Japan

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Meeting Abstracts of the Physical Society of Japan

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