20pXA-6 UHV-TEMによる極薄Si酸化膜を用いたSi(111)表面上でのGeナノドット形成過程の評価(II)(表面・界面ダイナミクス(半導体表面・実験),領域9(表面・界面,結晶成長))

Meeting Abstracts of the Physical Society of Japan

Online ISSN : 2189-0803
ISSN-L : 2189-0803

60.2.4

Session ID : 20pXA-6

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20pXA-6 UHV in-situ TEM observation of nucleation and evolution of Ge-nanodots on faintly oxidized Si(111) surfaces (II)

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