22aXJ-8 オージェー光電子コインシデンス分光法による酸化シリコン超薄膜(SiO_2/Si(100))の表面・界面の局所価電子状態を反映したオージェ電子スペクトルの測定(表面界面構造,領域9,表面・界面,結晶成長)

垣内 拓大; 藤田 斉彦; 間瀬 一彦

doi:10.11316/jpsgaiyo.62.2.4.0_922_1

Meeting Abstracts of the Physical Society of Japan

Online ISSN : 2189-0803
ISSN-L : 2189-0803

62.2.4

Session ID : 22aXJ-8

DOI https://doi.org/10.11316/jpsgaiyo.62.2.4.0_922_1

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22aXJ-8 Measurements of Auger electron spectra reflecting local valence electronic structure of the surface and the interface of silicon dioxide thin film (SiO_2/Si(100)) using Auger-Photoelectron Coincidence Spectroscopy

T. Kakiuchi, N. Fujita, K. Mase

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